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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- UNR422400A
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UNR422400A Технические параметры
Panasonic Electronic Components UNR422400A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 3-SSIP | |
| Supplier Device Package | NS-B1 | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Current-Collector (Ic) (Max) | 500mA | |
| Packaging | Tape & Reel (TR) | |
| Published | 2003 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | 50V | |
| Max Power Dissipation | 300mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 500mA | |
| Power - Max | 300mW | |
| Transistor Type | NPN - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | 250mV | |
| Max Collector Current | 500mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA 10V | |
| Current - Collector Cutoff (Max) | 1μA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 200MHz | |
| Resistor - Base (R1) | 2.2 kOhms | |
| Resistor - Emitter Base (R2) | 10 kOhms | |
| RoHS Status | RoHS Compliant |
UNR422400A Документы
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