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- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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- XN0111000L
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XN0111000L Технические параметры
Panasonic Electronic Components XN0111000L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74A, SOT-753 | |
| Supplier Device Package | Mini5-G1 | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Current-Collector (Ic) (Max) | 100mA | |
| Packaging | Cut Tape (CT) | |
| Published | 2004 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | -50V | |
| Max Power Dissipation | 300mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | -100mA | |
| Power - Max | 300mW | |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 250mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 80MHz | |
| Resistor - Base (R1) | 47kOhms | |
| RoHS Status | Non-RoHS Compliant |
XN0111000L Документы
- DatasheetsXN01110
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