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BC847BS_R1_00001 Технические параметры

Panjit  BC847BS_R1_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка Panjit
Package / Case SOT-363-6
Mounting Type Surface Mount
Supplier Device Package SOT-363
Emitter- Base Voltage VEBO 6 V
Pd - Power Dissipation 300 mW
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 200
Unit Weight 0.000280 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 100 MHz
Manufacturer Panjit
Brand Panjit
Maximum DC Collector Current 100 mA
DC Current Gain hFE Max 450
RoHS Details
Collector- Emitter Voltage VCEO Max 45 V
Свойство продукта Значение свойства
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current-Collector (Ic) (Max) 100mA
Mfr Panjit International Inc.
Product Status Active
Series DT-02TSN
Packaging MouseReel
Operating Temperature -55°C ~ 150°C (TJ)
Subcategory Transistors
Technology Si
Configuration Dual
Power - Max 300mW
Product Type BJTs - Bipolar Transistors
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 50 V
Continuous Collector Current 100 mA
Product Category Bipolar Transistors - BJT
Просмотр сходства
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