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MMDT4413_R1_00001 Технические параметры

Panjit  MMDT4413_R1_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка Panjit
Package / Case SOT-363-6
Mounting Type Surface Mount
Supplier Device Package SOT-363
Emitter- Base Voltage VEBO 6 V, 5 V
Pd - Power Dissipation 225 mW
Transistor Polarity NPN, PNP
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 100
Unit Weight 0.000280 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 250 MHz, 200 MHz
Manufacturer Panjit
Brand Panjit
Maximum DC Collector Current 600 mA
DC Current Gain hFE Max 300
RoHS Details
Collector- Emitter Voltage VCEO Max 40 V
Свойство продукта Значение свойства
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current-Collector (Ic) (Max) 600mA
Mfr Panjit International Inc.
Product Status Active
Series DT-03TS
Packaging MouseReel
Operating Temperature -55°C ~ 150°C (TJ)
Subcategory Transistors
Technology Si
Configuration Dual
Power - Max 225mW
Product Type BJTs - Bipolar Transistors
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V / 100 @ 150mA, 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Frequency - Transition 250MHz, 200MHz
Collector Base Voltage (VCBO) 60 V, 40 V
Continuous Collector Current - 600 mA, 600 mA
Product Category Bipolar Transistors - BJT
Просмотр сходства
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