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PJD12P06_L2_00001 Технические параметры

Panjit  PJD12P06_L2_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Panjit
Package / Case TO-252AA-3
Mounting Type Surface Mount
Supplier Device Package TO-252
Case Code - in 2010
Case Code - mm 5025
Unit Weight 0.001199 oz
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles PCB Mount
Manufacturer TT Electronics
Brand Welwyn Components / TT Electronics
RoHS Details
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-On Delay Time 4.4 ns
Vgs th - Gate-Source Threshold Voltage 4 V
Pd - Power Dissipation 2 W
Transistor Polarity P-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Channel Mode Enhancement
Qg - Gate Charge 10.9 nC
Rds On - Drain-Source Resistance 155 mOhms
Typical Turn-Off Delay Time 20 ns
Id - Continuous Drain Current 12 A
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃ 2.6A (Ta), 12A (Tc)
Свойство продукта Значение свойства
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Panjit International Inc.
Power Dissipation (Max) 2W (Ta), 50W (Tc)
Product Status Active
Series HVC
Packaging Reel
Operating Temperature -55°C ~ 150°C (TJ)
Tolerance 5 %
Temperature Coefficient 50 PPM / C
Resistance 3.01 MOhms
Subcategory Resistors
Technology Thick Film
Configuration Single
Number of Channels 1 ChannelChannel
FET Type P-Channel
Rds On (Max) @ Id, Vgs 155mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 10.9 nC @ 10 V
Rise Time 59 ns
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) ±20V
Product Type Thick Film Resistors
Transistor Type 1 P-Channel
FET Feature -
Features -
Product Category Thick Film Resistors - SMD
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