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PJD45P04_L2_00001 Технические параметры

Panjit  PJD45P04_L2_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Panjit
Package / Case TO-252AA-3
Mounting Type Surface Mount
Supplier Device Package TO-252
Vds - Drain-Source Breakdown Voltage 40 V
Typical Turn-On Delay Time 8.6 ns
Vgs th - Gate-Source Threshold Voltage 2.5 V
Pd - Power Dissipation 63 W
Transistor Polarity P-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.010476 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Channel Mode Enhancement
Manufacturer Panjit
Brand Panjit
Qg - Gate Charge 19 nC
Rds On - Drain-Source Resistance 25 mOhms
RoHS Details
Typical Turn-Off Delay Time 77 ns
Id - Continuous Drain Current 45 A
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Свойство продукта Значение свойства
Current - Continuous Drain (Id) @ 25℃ 8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr Panjit International Inc.
Power Dissipation (Max) 2W (Ta), 63W (Tc)
Product Status Active
Series NFET-40SMP
Packaging MouseReel
Operating Temperature -55°C ~ 150°C (TJ)
Subcategory MOSFETs
Technology Si
Configuration Single
Number of Channels 1 ChannelChannel
FET Type P-Channel
Rds On (Max) @ Id, Vgs 17mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V
Rise Time 9.6 ns
Drain to Source Voltage (Vdss) 40 V
Vgs (Max) ±20V
Product Type MOSFET
Transistor Type 1 P-Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
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