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- PJF18N20_T0_00001
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PJF18N20_T0_00001 Технические параметры
Panjit PJF18N20_T0_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Panjit | |
| Package / Case | ITO-220AB-F-3 | |
| Mounting Type | Through Hole | |
| Supplier Device Package | ITO-220AB | |
| Qualification | AEC-Q200 | |
| Voltage, Rating | 150 V | |
| Case Code - in | 1206 | |
| Case Code - mm | 3216 | |
| Maximum Operating Temperature | + 125 C | |
| Unit Weight | 0.000571 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 5000 | |
| Mounting Styles | PCB Mount | |
| Manufacturer | TT Electronics | |
| Brand | Welwyn Components / TT Electronics | |
| RoHS | Details | |
| Vds - Drain-Source Breakdown Voltage | 200 V | |
| Typical Turn-On Delay Time | 15 ns | |
| Vgs th - Gate-Source Threshold Voltage | 3 V | |
| Pd - Power Dissipation | 50 W | |
| Transistor Polarity | N-Channel | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Channel Mode | Enhancement | |
| Qg - Gate Charge | 24 nC | |
| Rds On - Drain-Source Resistance | 160 mOhms | |
| Typical Turn-Off Delay Time | 104 ns | |
| Id - Continuous Drain Current | 18 A | |
| Package | Tube | |
| Current - Continuous Drain (Id) @ 25℃ | 18A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Mfr | Panjit International Inc. | |
| Power Dissipation (Max) | 50W (Tc) | |
| Product Status | Active | |
| Series | PCF | |
| Packaging | Reel | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Tolerance | 0.1 % | |
| Temperature Coefficient | 25 PPM / C | |
| Resistance | 6.19 kOhms | |
| Subcategory | Resistors | |
| Power Rating | 125 mW (1/8 W) | |
| Technology | Thin Film | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 9A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1017 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | |
| Rise Time | 61 ns | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Vgs (Max) | ±20V | |
| Product Type | Thin Film Resistors | |
| Transistor Type | 1 N-Channel | |
| FET Feature | - | |
| Features | - | |
| Product Category | Thin Film Resistors - SMD | |
| Width | 1.55 mm | |
| Height | 0.65 mm | |
| Length | 3.05 mm |
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