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PJMP120N60EC_T0_00001 Технические параметры

Panjit  PJMP120N60EC_T0_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Panjit
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB-L
Vds - Drain-Source Breakdown Voltage 600 V
Vgs th - Gate-Source Threshold Voltage 4 V
Pd - Power Dissipation 235 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Unit Weight 0.073899 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2000
Mounting Styles Through Hole
Channel Mode Enhancement
Manufacturer Panjit
Brand Panjit
Qg - Gate Charge 51 nC
Rds On - Drain-Source Resistance 120 mOhms
RoHS Details
Id - Continuous Drain Current 30 A
Package Tube
Свойство продукта Значение свойства
Current - Continuous Drain (Id) @ 25℃ 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Panjit International Inc.
Power Dissipation (Max) 235W (Tc)
Product Status Active
Series 600V SJ MOSFET
Packaging MouseReel
Operating Temperature -55°C ~ 150°C (TJ)
Subcategory MOSFETs
Technology Si
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±30V
Product Type MOSFET
FET Feature -
Product MOSFET
Product Category MOSFET
Просмотр сходства
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