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- PJP40N06A_T0_00001
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PJP40N06A_T0_00001 Технические параметры
Panjit PJP40N06A_T0_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Panjit | |
| Package / Case | TO-220AB-3 | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Qualification | AEC-Q200 | |
| Case Code - in | 2512 | |
| Case Code - mm | 6432 | |
| Unit Weight | 0.001429 oz | |
| Factory Pack QuantityFactory Pack Quantity | 1800 | |
| Mounting Styles | PCB Mount | |
| Manufacturer | TT Electronics | |
| Brand | Welwyn Components / TT Electronics | |
| RoHS | Details | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Typical Turn-On Delay Time | 11 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Pd - Power Dissipation | 93 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Minimum Operating Temperature | - 55 C | |
| Channel Mode | Enhancement | |
| Qg - Gate Charge | 13.5 nC | |
| Rds On - Drain-Source Resistance | 20 mOhms | |
| Typical Turn-Off Delay Time | 35 ns | |
| Id - Continuous Drain Current | 50 A | |
| Package | Tube | |
| Current - Continuous Drain (Id) @ 25℃ | 50A (Tc) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Mfr | Panjit International Inc. | |
| Power Dissipation (Max) | 93W (Tc) | |
| Product Status | Obsolete | |
| Series | HVC | |
| Packaging | Reel | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Tolerance | 0.5 % | |
| Temperature Coefficient | 100 PPM / C | |
| Resistance | 84.5 kOhms | |
| Applications | Automotive Grade | |
| Subcategory | Resistors | |
| Technology | Thick Film | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1574 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 4.5 V | |
| Rise Time | 11 ns | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Vgs (Max) | ±20V | |
| Product Type | Thick Film Resistors | |
| Transistor Type | 1 N-Channel | |
| FET Feature | - | |
| Features | - | |
| Product Category | Thick Film Resistors - SMD |
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