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PJP4NA90_T0_00001 Технические параметры

Panjit  PJP4NA90_T0_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Panjit
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Package Tube
Current - Continuous Drain (Id) @ 25℃ 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Panjit International Inc.
Power Dissipation (Max) 140W (Tc)
Product Status Obsolete
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Drain to Source Voltage (Vdss) 900 V
Vgs (Max) ±30V
FET Feature -
Просмотр сходства
PJP4NA90_T0_00001 brand manufacturers: Panjit, Anli stock, PJP4NA90_T0_00001 reference price.Panjit. PJP4NA90_T0_00001 parameters, PJP4NA90_T0_00001 Datasheet PDF and pin diagram description download.You can use the PJP4NA90_T0_00001 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find PJP4NA90_T0_00001 pin diagram and circuit diagram and usage method of function,PJP4NA90_T0_00001 electronics tutorials.You can download from the Anli.