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PJP8NA65A_T0_00001 Технические параметры

Panjit  PJP8NA65A_T0_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Panjit
Package / Case TO-220AB-3
Mounting Type Through Hole
Supplier Device Package TO-220AB
RoHS Non-Compliant
Vds - Drain-Source Breakdown Voltage 650 V
Typical Turn-On Delay Time 15 ns
Vgs th - Gate-Source Threshold Voltage 4 V
Pd - Power Dissipation 145 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Unit Weight 0.068784 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 50
Mounting Styles Through Hole
Channel Mode Enhancement
Manufacturer Panjit
Brand Panjit
Qg - Gate Charge 29 nC
Rds On - Drain-Source Resistance 1.2 Ohms
Typical Turn-Off Delay Time 92 ns
Id - Continuous Drain Current 7.5 A
Свойство продукта Значение свойства
Current - Continuous Drain (Id) @ 25℃ 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Panjit International Inc.
Power Dissipation (Max) 145W (Tc)
Product Status Not For New Designs
Series NFET-650CTMN
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Subcategory MOSFETs
Technology Si
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 1245 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Rise Time 27 ns
Drain to Source Voltage (Vdss) 650 V
Vgs (Max) ±30V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
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