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PJQ1906_R1_00201 Технические параметры

Panjit  PJQ1906_R1_00201 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Panjit
Mounting Type Surface Mount
Package / Case 3-UFDFN
Supplier Device Package DFN1006-3
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number PJQ1906
Current - Continuous Drain (Id) @ 25℃ 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Mfr Panjit International Inc.
Power Dissipation (Max) 700mW (Ta)
Product Status Active
Vds - Drain-Source Breakdown Voltage 30 V
Vgs th - Gate-Source Threshold Voltage 1 V
Pd - Power Dissipation 700 mW
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 10 V, + 10 V
Unit Weight 0.000021 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 10000
Mounting Styles SMD/SMT
Channel Mode Enhancement
Свойство продукта Значение свойства
Manufacturer Panjit
Brand Panjit
Qg - Gate Charge 900 pC
Rds On - Drain-Source Resistance 1.2 Ohms
RoHS Details
Id - Continuous Drain Current 300 mA
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Packaging Cut Tape
Subcategory MOSFETs
Technology MOSFET (Metal Oxide)
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 300mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss) 30 V
Vgs (Max) ±10V
Product Type MOSFET
FET Feature -
Product Category MOSFET
Просмотр сходства
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