Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - FETs, MOSFETs - Single
- /
- PJU3NA80_T0_00001
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
PJU3NA80_T0_00001 Технические параметры
Panjit PJU3NA80_T0_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Panjit | |
| Package / Case | Axial | |
| Mounting Type | Through Hole | |
| Supplier Device Package | Axial | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | Panjit International Inc. | |
| Power Dissipation (Max) | 80W (Tc) | |
| Product Status | Obsolete | |
| Operating Temperature | -55°C ~ 155°C | |
| Series | CF | |
| Packaging | Bulk | |
| Size / Dimension | 0.106 Dia x 0.335 L (2.70mm x 8.50mm) | |
| Tolerance | ±5% | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Terminations | 2Terminations | |
| Temperature Coefficient | 0/ -400ppm/°C | |
| Resistance | 180 Ohms | |
| Composition | Carbon Film | |
| Power (Watts) | 0.5W, 1/2W | |
| Technology | MOSFET (Metal Oxide) | |
| Failure Rate | -- | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 406 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Vgs (Max) | ±30V | |
| FET Feature | - | |
| Features | Flame Retardant Coating, Safety | |
| Height Seated (Max) | -- |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ