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Panjit PJW1NA50_R2_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Panjit | |
| Mounting Type | Panel Mount, Through Hole | |
| Package / Case | TO-261-4, TO-261AA | |
| Supplier Device Package | SOT-223 | |
| Dielectric Material | Polycyclohexylenedimethylene Terephthalate (PCT) | |
| Shell Material, Finish | Steel, Yellow Chromate Plated Zinc | |
| Voltage, Rating | - | |
| Package | Bulk | |
| Base Product Number | DCM1 | |
| Mfr | ITT Cannon, LLC | |
| Product Status | Active | |
| Contact Materials | Copper Alloy | |
| Current - Continuous Drain (Id) @ 25℃ | 300mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 3.3W (Tc) | |
| Operating Temperature | -55°C ~ 125°C | |
| Series | Combo D®, D*M | |
| Termination | Solder | |
| Connector Type | Receptacle, Female Sockets | |
| Number of Positions | 17 (12 + 5 Coax or Power)Position | |
| Color | Black | |
| Number of Rows | 2Rows |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Contact Type | Signal and Coax or Power (Not Included) | |
| Current Rating (Amps) | 7.5A | |
| Technology | MOSFET (Metal Oxide) | |
| Ingress Protection | - | |
| Contact Finish | Gold | |
| Wire Gauge | - | |
| Flange Feature | Housing/Shell (Unthreaded) | |
| Connector Style | D-Sub, Combo | |
| Contact Form | - | |
| Shell Size, Connector Layout | 4 (DC, C) - 17W5 | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 95 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Vgs (Max) | ±30V | |
| Backset Spacing | - | |
| FET Feature | - | |
| Features | Shielded | |
| Contact Finish Thickness | Flash | |
| Material Flammability Rating | UL94 V-0 |