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QPD1004SR Технические параметры

Qorvo  QPD1004SR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка Qorvo
Package / Case DFN-8
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 50 V
Vgs - Gate-Source Breakdown Voltage 145 V
Id - Continuous Drain Current 3.6 A
Maximum Drain Gate Voltage 55 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 27.6 W
Mounting Styles SMD/SMT
Свойство продукта Значение свойства
Development Kit QPD1004EVB1
Forward Transconductance - Min -
Moisture Sensitive Yes
Factory Pack QuantityFactory Pack Quantity 100
Part # Aliases QPD1004
Unit Weight 0.162567 oz
Packaging MouseReel
Series QPD1004
Operating Frequency 30 MHz to 1200 MHz
Output Power 40 W
Transistor Type HEMT
Gain 20.8 dB
QPD1004SR brand manufacturers: Qorvo, Anli stock, QPD1004SR reference price.Qorvo. QPD1004SR parameters, QPD1004SR Datasheet PDF and pin diagram description download.You can use the QPD1004SR Transistors - JFETs, DSP Datesheet PDF, find QPD1004SR pin diagram and circuit diagram and usage method of function,QPD1004SR electronics tutorials.You can download from the Anli.