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QPD1009 Технические параметры
Qorvo QPD1009 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | Qorvo | |
| Package / Case | QFN-16 | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Vds - Drain-Source Breakdown Voltage | 50 V | |
| Vgs - Gate-Source Breakdown Voltage | 145 V | |
| Id - Continuous Drain Current | 700 mA | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 85 C | |
| Pd - Power Dissipation | 17.5 W | |
| Mounting Styles | SMD/SMT | |
| Development Kit | QPD1009-EVB1 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitive | Yes | |
| Factory Pack QuantityFactory Pack Quantity | 50 | |
| Vgs th - Gate-Source Threshold Voltage | - 2.8 V | |
| Part # Aliases | 1132865 1132865 | |
| Unit Weight | 0.203046 oz | |
| Packaging | Tray | |
| Series | QPD1009 | |
| Operating Frequency | 4 GHz | |
| Configuration | Single | |
| Output Power | 17 W | |
| Transistor Type | HEMT | |
| Operating Temperature Range | - 40 C to + 85 C | |
| Gain | 24 dB |
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