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QPD1011SR Технические параметры

Qorvo  QPD1011SR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка Qorvo
Package / Case SMD-8
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 50 V
Vgs - Gate-Source Breakdown Voltage 145 V
Id - Continuous Drain Current 1.46 A
Maximum Drain Gate Voltage 55 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 13 W
Свойство продукта Значение свойства
Mounting Styles SMD/SMT
Development Kit QPD1011EVB01
Forward Transconductance - Min -
Moisture Sensitive Yes
Factory Pack QuantityFactory Pack Quantity 100
Part # Aliases QPD1011
Packaging Reel
Series QPD1011
Operating Frequency 30 MHz to 1200 MHz
Output Power 8.7 W
Transistor Type HEMT
Gain 21 dB
QPD1011SR brand manufacturers: Qorvo, Anli stock, QPD1011SR reference price.Qorvo. QPD1011SR parameters, QPD1011SR Datasheet PDF and pin diagram description download.You can use the QPD1011SR Transistors - JFETs, DSP Datesheet PDF, find QPD1011SR pin diagram and circuit diagram and usage method of function,QPD1011SR electronics tutorials.You can download from the Anli.