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QPD1013SR Технические параметры

Qorvo  QPD1013SR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка Qorvo
Package / Case DFN-6
Development Kit QPD1013EVB01
Moisture Sensitive Yes
Factory Pack QuantityFactory Pack Quantity 100
Part # Aliases QPD1013
Unit Weight 0.274843 oz
RoHS Details
Transistor Polarity N-Channel
Id - Continuous Drain Current 1.7 A
Maximum Drain Gate Voltage 65 V
Свойство продукта Значение свойства
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 67 W
Mounting Styles SMD/SMT
Series QPD1013
Packaging Reel
Applications Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications
Operating Frequency 1.2 GHz to 2.7 GHz
Configuration Single Triple Drain
Output Power 178 W
Transistor Type HEMT
Gain 21.8 dB
Просмотр сходства
QPD1013SR brand manufacturers: Qorvo, Anli stock, QPD1013SR reference price.Qorvo. QPD1013SR parameters, QPD1013SR Datasheet PDF and pin diagram description download.You can use the QPD1013SR Transistors - JFETs, DSP Datesheet PDF, find QPD1013SR pin diagram and circuit diagram and usage method of function,QPD1013SR electronics tutorials.You can download from the Anli.