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Qorvo QPD1025L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | Qorvo | |
| Package / Case | NI-1230-4 | |
| RoHS | Details | |
| Id - Continuous Drain Current | 28 A | |
| Maximum Drain Gate Voltage | 225 V | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 85 C | |
| Pd - Power Dissipation | 758 W | |
| Mounting Styles | SMD/SMT | |
| Development Kit | QPD1025LEVB1 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitive | Yes | |
| Factory Pack QuantityFactory Pack Quantity | 18 | |
| Unit Weight | 1.399148 oz | |
| Packaging | Tray | |
| Series | QPD1025L | |
| Applications | Avionics, IFF Transponders | |
| Operating Frequency | 1 GHz to 1.1 GHz | |
| Configuration | Dual Gate Dual Drain | |
| Output Power | 1.5 kW | |
| Transistor Type | HEMT | |
| Gain | 22.9 dB |