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TGF2819-FL Технические параметры
Qorvo TGF2819-FL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | Qorvo | |
| Package / Case | NI-360 | |
| Shipping Restrictions | This product may require additional documentation to export from the United States. | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Vds - Drain-Source Breakdown Voltage | 32 V | |
| Vgs - Gate-Source Breakdown Voltage | - 2.9 V | |
| Id - Continuous Drain Current | 7.32 A | |
| Maximum Drain Gate Voltage | 145 V | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 85 C | |
| Pd - Power Dissipation | 86 W | |
| Mounting Styles | Screw Mount |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Development Kit | TGF2819-FS/FL, EVAL BOARD | |
| Moisture Sensitive | Yes | |
| Factory Pack QuantityFactory Pack Quantity | 25 | |
| Part # Aliases | TGF2819 1118709 | |
| Packaging | Tray | |
| Series | TGF2819 | |
| Type | GaN SiC HEMT | |
| Operating Frequency | 3.5 GHz | |
| Configuration | Single | |
| Output Power | 100 W | |
| Transistor Type | HEMT | |
| Operating Temperature Range | - 40 C to + 85 C | |
| Gain | 14 dB |
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