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2N7002K Технические параметры
Rectron 2N7002K technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Rectron | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | TO-252 (Type WX) | |
| Package | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | |
| Base Product Number | DSC06 | |
| Mfr | Diodes Incorporated | |
| Product Status | Active | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Typical Turn-On Delay Time | 10 ns | |
| Vgs th - Gate-Source Threshold Voltage | 1 V | |
| Pd - Power Dissipation | 350 mW | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Unit Weight | 0.000282 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 0.1 S | |
| Channel Mode | Enhancement | |
| Manufacturer | Rectron | |
| Brand | Rectron | |
| Qg - Gate Charge | 3 nC | |
| Rds On - Drain-Source Resistance | 3 Ohms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 17 ns | |
| Id - Continuous Drain Current | 300 mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current - Continuous Drain (Id) @ 25℃ | 300mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
| Power Dissipation (Max) | 350mW (Ta) | |
| Series | - | |
| Packaging | Reel | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Subcategory | MOSFETs | |
| Technology | Schottky | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 6A | |
| Rise Time | 50 ns | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Vgs (Max) | ±20V | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Capacitance @ Vr, F | 278pF @ 100mV, 1MHz | |
| FET Feature | - | |
| Product Category | MOSFET |
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