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RM8N650HD-T Технические параметры
Rectron RM8N650HD-T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Rectron | |
| Package / Case | TO-263-3 | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Typical Turn-On Delay Time | 5.5 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Pd - Power Dissipation | 80 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
| Unit Weight | 0.139332 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 800 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 5.5 S | |
| Channel Mode | Enhancement | |
| Part # Aliases | RM8N650HD |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Rectron | |
| Brand | Rectron | |
| Qg - Gate Charge | 22 nC | |
| Rds On - Drain-Source Resistance | 540 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 55 ns | |
| Id - Continuous Drain Current | 8 A | |
| Packaging | Reel | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Rise Time | 3.5 ns | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Product Category | MOSFET |
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