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2SC3380ASTR-E Технические параметры
Renesas 2SC3380ASTR-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | Renesas | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Surface Mount | YES | |
| Supplier Device Package | UPAK | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Renesas | |
| Package | Bulk | |
| Product Status | Obsolete | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | PLZZ0004CA-A4 | |
| Reflow Temperature-Max (s) | 20 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 80 MHz | |
| Manufacturer Part Number | 2SC3380ASTR-E | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Renesas Electronics Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.29 | |
| Part Package Code | UPAK |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| JESD-609 Code | e6 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Subcategory | Other Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-F3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Power - Max | 1 W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 20V | |
| Current - Collector Cutoff (Max) | 1μA | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 20mA | |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | |
| Frequency - Transition | 80MHz | |
| Power Dissipation-Max (Abs) | 1 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 30 | |
| Collector-Emitter Voltage-Max | 300 V |
Индекс :
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