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2SC4957-T1-A Технические параметры

Renesas  2SC4957-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Renesas
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Supplier Device Package SOT-143
Transistor Polarity NPN
Package Bulk
Current-Collector (Ic) (Max) 30mA
Mfr Renesas Electronics America Inc
Product Status Obsolete
Operating Temperature 150°C (TJ)
Свойство продукта Значение свойства
Series -
Power Dissipation 180
Power - Max 180mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA, 3V
Gain 11dB
Voltage - Collector Emitter Breakdown (Max) 6V
Transition Frequency 12
Frequency - Transition 12GHz
Continuous Collector Current 30
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
2SC4957-T1-A brand manufacturers: Renesas, Anli stock, 2SC4957-T1-A reference price.Renesas. 2SC4957-T1-A parameters, 2SC4957-T1-A Datasheet PDF and pin diagram description download.You can use the 2SC4957-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2SC4957-T1-A pin diagram and circuit diagram and usage method of function,2SC4957-T1-A electronics tutorials.You can download from the Anli.