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2SC5509-T2-A Технические параметры
Renesas 2SC5509-T2-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Renesas | |
| Mount | Surface Mount | |
| Package / Case | SC-82A, SOT-343 | |
| Mounting Type | Surface Mount | |
| Number of Pins | 2Pins | |
| Supplier Device Package | SOT-343 | |
| Voltage, Rating | 50 V | |
| Voltage Rating (DC) | 50 V | |
| RoHS | Compliant | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 100mA | |
| Mfr | Renesas Electronics America Inc | |
| Product Status | Obsolete | |
| Packaging | Tape & Reel | |
| Operating Temperature | 150°C (TJ) | |
| Series | - | |
| Tolerance | 5 % | |
| Termination | SMD/SMT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 125 °C | |
| Min Operating Temperature | -55 °C | |
| Capacitance | 910 pF | |
| Depth | 1.25 mm | |
| Case Code (Metric) | 2012 | |
| Case Code (Imperial) | 0805 | |
| Dielectric | C0G | |
| Power - Max | 190mW | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 2V | |
| Gain | 14dB | |
| Voltage - Collector Emitter Breakdown (Max) | 3.3V | |
| Frequency - Transition | 15GHz | |
| Noise Figure (dB Typ @ f) | 1.2dB @ 2GHz | |
| Width | 1.25 mm | |
| Length | 2.01 mm | |
| Thickness | 939.8 µm | |
| Radiation Hardening | No |
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