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2SC5752-T1-A Технические параметры

Renesas  2SC5752-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Renesas
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Supplier Device Package SOT-343
RoHS Non-Compliant
Package Bulk
Current-Collector (Ic) (Max) 100mA
Mfr Renesas Electronics America Inc
Product Status Obsolete
Свойство продукта Значение свойства
Operating Temperature 150°C (TJ)
Series -
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 30mA, 3V
Gain 13dB
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 12GHz
Noise Figure (dB Typ @ f) 1.7dB @ 2GHz
2SC5752-T1-A brand manufacturers: Renesas, Anli stock, 2SC5752-T1-A reference price.Renesas. 2SC5752-T1-A parameters, 2SC5752-T1-A Datasheet PDF and pin diagram description download.You can use the 2SC5752-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2SC5752-T1-A pin diagram and circuit diagram and usage method of function,2SC5752-T1-A electronics tutorials.You can download from the Anli.