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2SK1399-T1B-A Технические параметры
Renesas 2SK1399-T1B-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Renesas | |
| Factory Lead Time | 1 Week | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package | Bulk | |
| Mfr | Renesas Electronics America Inc | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | PLSP0003ZD-A3 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | 2SK1399-T1B-A | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Renesas Electronics Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.68 | |
| Part Package Code | MM | |
| Drain Current-Max (ID) | 0.1 A | |
| Series | * | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 0.1 A | |
| Drain-source On Resistance-Max | 40 Ω | |
| DS Breakdown Voltage-Min | 50 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.2 W |
Индекс :
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