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CA3260W Технические параметры
Renesas CA3260W technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps | |
| Марка | Renesas | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220-3 | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 3.9A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | Fairchild Semiconductor | |
| Power Dissipation (Max) | 130W (Tc) | |
| Product Status | Active | |
| Voltage - Supply Span (Max) | 16 V | |
| Voltage - Supply Span (Min) | 4 V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | QFET® | |
| Technology | MOSFET (Metal Oxide) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Output Type | - | |
| Number of Circuits | 2Circuits | |
| Current - Supply | 9mA (x2 Channels) | |
| Slew Rate | 10V/µs | |
| Amplifier Type | CMOS | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.95A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| Gain Bandwidth Product | 4 MHz | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Vgs (Max) | ±30V | |
| Voltage - Input Offset | 6 mV | |
| Current - Output / Channel | 22 mA | |
| FET Feature | - |
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