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FA4L4L-T1B-A Технические параметры

Renesas  FA4L4L-T1B-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка Renesas
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Mfr Renesas
Package Bulk
Product Status Obsolete
Current-Collector (Ic) (Max) 100 mA
Свойство продукта Значение свойства
Series -
Power - Max 200 mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 5mA, 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 22 kOhms
Просмотр сходства
FA4L4L-T1B-A brand manufacturers: Renesas, Anli stock, FA4L4L-T1B-A reference price.Renesas. FA4L4L-T1B-A parameters, FA4L4L-T1B-A Datasheet PDF and pin diagram description download.You can use the FA4L4L-T1B-A Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FA4L4L-T1B-A pin diagram and circuit diagram and usage method of function,FA4L4L-T1B-A electronics tutorials.You can download from the Anli.