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NE68819-T1-A Технические параметры

Renesas  NE68819-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Renesas
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SC-75 (USM)
RoHS Non-Compliant
Package Tape & Reel (TR)
Current-Collector (Ic) (Max) 100mA
Mfr Renesas
Product Status Last Time Buy
Свойство продукта Значение свойства
Operating Temperature 150°C (TJ)
Series -
Power - Max 125mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 3mA, 1V
Gain 8dB
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 9GHz
Noise Figure (dB Typ @ f) 1.7dB @ 2GHz
NE68819-T1-A brand manufacturers: Renesas, Anli stock, NE68819-T1-A reference price.Renesas. NE68819-T1-A parameters, NE68819-T1-A Datasheet PDF and pin diagram description download.You can use the NE68819-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE68819-T1-A pin diagram and circuit diagram and usage method of function,NE68819-T1-A electronics tutorials.You can download from the Anli.