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- NE85639-T1-R27-A
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NE85639-T1-R27-A Технические параметры
Renesas NE85639-T1-R27-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Renesas | |
| Mounting Type | Chassis Mount | |
| Package / Case | INT-A-PAK (3 + 4) | |
| Supplier Device Package | SOT-143 | |
| Lead Free Status / RoHS Status | -- | |
| Number of SCRs/Diodes | 1 SCR, 1 DiodeSCRs/Diode | |
| Voltage-Off State | 400V | |
| Package | Tape & Reel (TR) | |
| Current-Collector (Ic) (Max) | 100mA | |
| Mfr | Renesas | |
| Product Status | Obsolete | |
| Operating Temperature | -40°C ~ 125°C (TJ) | |
| Series | -- | |
| Packaging | Bulk | |
| Part Status | Obsolete |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | -- | |
| Base Part Number | KT136 | |
| Power - Max | 200mW | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V | |
| Gain | 13dB | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Frequency - Transition | 9GHz | |
| Voltage - Gate Trigger (Vgt) (Max) | 2.5V | |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 3200A, 3360A | |
| Current - Gate Trigger (Igt) (Max) | 150mA | |
| Current - Hold (Ih) (Max) | 200mA | |
| Current - On State (It (RMS)) (Max) | 300A | |
| Structure | Series Connection - SCR/Diode | |
| Current - On State (It (AV)) (Max) | 135A | |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
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