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NESG270034-T1-AZ Технические параметры

Renesas  NESG270034-T1-AZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Renesas
Package / Case TO-243AA
Mounting Type Surface Mount
Supplier Device Package SOT-89
Enclosure FS3
Package DA1FS3IP66
Manufacturer Part Number DA1-34018FB-A6SC
Manufacturer Cutler Hammer, Div of Eaton Corp
Mounting Panel
Product Status Last Time Buy
Mfr Renesas
Свойство продукта Значение свойства
Current-Collector (Ic) (Max) 750mA
Series -
Operating Temperature 150°C (TJ)
Power - Max 1.9W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 3V
Gain 19.5dB
Voltage - Collector Emitter Breakdown (Max) 9.2V
Max Frequency 500 Hz
Frequency - Transition -
Noise Figure (dB Typ @ f) -
IP Rating IP66
Просмотр сходства
NESG270034-T1-AZ brand manufacturers: Renesas, Anli stock, NESG270034-T1-AZ reference price.Renesas. NESG270034-T1-AZ parameters, NESG270034-T1-AZ Datasheet PDF and pin diagram description download.You can use the NESG270034-T1-AZ Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NESG270034-T1-AZ pin diagram and circuit diagram and usage method of function,NESG270034-T1-AZ electronics tutorials.You can download from the Anli.