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- NP88N055KLE-E1-AY
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NP88N055KLE-E1-AY Технические параметры
Renesas NP88N055KLE-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Renesas | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Turn Off Delay Time | 180 ns | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | NP88N055KLE-E1-AY | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NEC Electronics Group | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Risk Rank | 5.26 | |
| Part Package Code | D2PAK | |
| Drain Current-Max (ID) | 88 A | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -55 °C | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 37 ns | |
| Transistor Application | SWITCHING | |
| Rise Time | 22 ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 88 A | |
| JEDEC-95 Code | TO-263AB | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain-source On Resistance-Max | 0.0068 Ω | |
| Pulsed Drain Current-Max (IDM) | 352 A | |
| DS Breakdown Voltage-Min | 55 V | |
| Avalanche Energy Rating (Eas) | 562 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Radiation Hardening | No |
Индекс :
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