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- NP88N075EUE-E2-AY
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NP88N075EUE-E2-AY Технические параметры
Renesas NP88N075EUE-E2-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Renesas | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Mounting Type | Surface Mount | |
| Surface Mount | YES | |
| Supplier Device Package | TO-263-3 | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Power Dissipation (Max) | 1.8W (Ta), 288W (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Current - Continuous Drain (Id) @ 25℃ | 88A (Tc) | |
| Product Status | Obsolete | |
| Package | Bulk | |
| Mfr | Renesas | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | NP88N075EUE-E2-AY | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NEC Electronics Group | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Risk Rank | 5.26 | |
| Part Package Code | D2PAK | |
| Drain Current-Max (ID) | 88 A | |
| Operating Temperature | 175°C | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 44A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 12300 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 75 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263AB | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| Pulsed Drain Current-Max (IDM) | 352 A | |
| DS Breakdown Voltage-Min | 75 V | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | - |
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