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PS2561D-1Y-W-A Технические параметры

Renesas  PS2561D-1Y-W-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Optoisolators - Transistor, Photovoltaic Output
Марка Renesas
Package / Case DIP-4
Mounting Type Through Hole
Supplier Device Package 4-DIP
Vr - Reverse Voltage 6 V
Maximum Collector Emitter Saturation Voltage 0.3 V
Pd - Power Dissipation 150 mW
Maximum Collector Current 50 mA
Maximum Operating Temperature + 110 C
Unit Weight 0.009171 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 100
Mounting Styles Through Hole
Maximum Collector Emitter Voltage 80 V
Manufacturer Renesas Electronics
Brand Renesas Electronics
If - Forward Current 40 mA
RoHS Details
Current Transfer Ratio-Min 130 %
Package Tube
Mfr Renesas Electronics America Inc
Product Status Active
Свойство продукта Значение свойства
Series PS2561D
Packaging Tube
Operating Temperature -55°C ~ 110°C
Subcategory Optocouplers
Voltage - Isolation 5000Vrms
Output Type NPN Phototransistor
Configuration 1 Channel
Number of Channels 1 ChannelChannel
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Rise Time 3 us
Product Type Transistor Output Optocouplers
Rise / Fall Time (Typ) 3µs, 5µs
Current - Output / Channel 50mA
Voltage - Output (Max) 80V
Current - DC Forward (If) (Max) 40 mA
Isolation Voltage 5000 Vrms
Current Transfer Ratio (Max) 260 %
Turn On / Turn Off Time (Typ) -
Vce Saturation (Max) 300mV
Current Transfer Ratio 130 %
Vf - Forward Voltage 1.4 V
Product Category Transistor Output Optocouplers
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