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UPA806T-T1-A Технические параметры

Renesas  UPA806T-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Renesas
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-SuperMiniMold
RoHS Non-Compliant
Package Tape & Reel (TR)
Current-Collector (Ic) (Max) 30mA
Mfr Renesas
Product Status Last Time Buy
Свойство продукта Значение свойства
Operating Temperature 150°C (TJ)
Series -
Power - Max 200mW
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA, 3V
Gain 8.5dB
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 12GHz
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
UPA806T-T1-A brand manufacturers: Renesas, Anli stock, UPA806T-T1-A reference price.Renesas. UPA806T-T1-A parameters, UPA806T-T1-A Datasheet PDF and pin diagram description download.You can use the UPA806T-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find UPA806T-T1-A pin diagram and circuit diagram and usage method of function,UPA806T-T1-A electronics tutorials.You can download from the Anli.