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2SJ555-E Технические параметры
Renesas Electronics America 2SJ555-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | PRSS0004ZE-A4 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | 2SJ555-E | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Renesas Electronics Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Not Recommended | |
| Samacsys Description | 2SJ555-E P-Channel MOSFET, 240 A, 60 V, 3-Pin TO-3P Renesas | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.21 | |
| Part Package Code | TO-3P | |
| Drain Current-Max (ID) | 60 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e2 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Subcategory | Other Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 125 W |
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