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2SJ687-ZK-E1-AY Технические параметры

Renesas Electronics America  2SJ687-ZK-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 20A Tc
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta 36W Tc
Turn Off Delay Time 270 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Rise Time 220ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 310 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.02A
Drain-source On Resistance-Max 0.02Ohm
DS Breakdown Voltage-Min 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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