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2SK1317-E Технические параметры

Renesas Electronics America  2SK1317-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Transistor Element Material SILICON
Manufacturer Package Identifier PRSS0004ZE-A
Current - Continuous Drain (Id) @ 25℃ 2.5A Ta
Drive Voltage (Max Rds On, Min Rds On) 15V
Number of Elements 1 Element
Power Dissipation (Max) 100W Tc
Turn Off Delay Time 110 ns
Operating Temperature 150°C TJ
Packaging Tube
Published 1999
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position SINGLE
Pin Count 4
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 2A, 15V
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 1500V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 7A
Nominal Vgs 4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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2SK1317-E Документы

2SK1317-E brand manufacturers: Renesas Electronics America, Anli stock, 2SK1317-E reference price.Renesas Electronics America. 2SK1317-E parameters, 2SK1317-E Datasheet PDF and pin diagram description download.You can use the 2SK1317-E Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find 2SK1317-E pin diagram and circuit diagram and usage method of function,2SK1317-E electronics tutorials.You can download from the Anli.