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Renesas Electronics America 2SK1317-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Factory Lead Time | 16 Weeks | |
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | TO-3P-3, SC-65-3 | |
Number of Pins | 3Pins | |
Transistor Element Material | SILICON | |
Manufacturer Package Identifier | PRSS0004ZE-A | |
Current - Continuous Drain (Id) @ 25℃ | 2.5A Ta | |
Drive Voltage (Max Rds On, Min Rds On) | 15V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 100W Tc | |
Turn Off Delay Time | 110 ns | |
Operating Temperature | 150°C TJ | |
Packaging | Tube | |
Published | 1999 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
Terminal Position | SINGLE | |
Pin Count | 4 |
Свойство продукта | Значение свойства | |
---|---|---|
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 100W | |
Case Connection | DRAIN | |
Turn On Delay Time | 17 ns | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 12 Ω @ 2A, 15V | |
Input Capacitance (Ciss) (Max) @ Vds | 990pF @ 10V | |
Rise Time | 70ns | |
Drain to Source Voltage (Vdss) | 1500V | |
Vgs (Max) | ±20V | |
Fall Time (Typ) | 60 ns | |
Continuous Drain Current (ID) | 2.5A | |
Threshold Voltage | 4V | |
Gate to Source Voltage (Vgs) | 20V | |
Pulsed Drain Current-Max (IDM) | 7A | |
Nominal Vgs | 4 V | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |