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Renesas Electronics America 2SK2225-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Factory Lead Time | 16 Weeks | |
Mounting Type | Through Hole | |
Package / Case | TO-3PFM, SC-93-3 | |
Surface Mount | NO | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 2A Ta | |
Drive Voltage (Max Rds On, Min Rds On) | 15V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 50W Tc | |
Turn Off Delay Time | 150 ns | |
Operating Temperature | 150°C TJ | |
Packaging | Tube | |
Published | 2005 | |
JESD-609 Code | e2 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin/Copper (Sn/Cu) | |
Terminal Position | SINGLE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Свойство продукта | Значение свойства | |
---|---|---|
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Pin Count | 3 | |
JESD-30 Code | R-PSFM-T3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Number of Channels | 1Channel | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 50W | |
Case Connection | ISOLATED | |
Turn On Delay Time | 17 ns | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 12 Ω @ 1A, 15V | |
Input Capacitance (Ciss) (Max) @ Vds | 984.7pF @ 30V | |
Drain to Source Voltage (Vdss) | 1500V | |
Vgs (Max) | ±20V | |
Continuous Drain Current (ID) | 2A | |
Gate to Source Voltage (Vgs) | 20V | |
Drain Current-Max (Abs) (ID) | 2A | |
Drain to Source Breakdown Voltage | 1.5kV | |
Pulsed Drain Current-Max (IDM) | 7A | |
Height | 25.5mm | |
RoHS Status | ROHS3 Compliant |