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FN4L4M-T1B-A Технические параметры

Renesas Electronics America  FN4L4M-T1B-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 200mW
Свойство продукта Значение свойства
Polarity/Channel Type PNP
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 250μ, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Power Dissipation-Max (Abs) 0.2W
Resistor - Base (R1) 22 Ω
Resistor - Emitter Base (R2) 22 Ω
RoHS Status RoHS Compliant
Просмотр сходства

FN4L4M-T1B-A Документы

FN4L4M-T1B-A brand manufacturers: Renesas Electronics America, Anli stock, FN4L4M-T1B-A reference price.Renesas Electronics America. FN4L4M-T1B-A parameters, FN4L4M-T1B-A Datasheet PDF and pin diagram description download.You can use the FN4L4M-T1B-A Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FN4L4M-T1B-A pin diagram and circuit diagram and usage method of function,FN4L4M-T1B-A electronics tutorials.You can download from the Anli.