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HAT2169H-EL-E Технические параметры

Renesas Electronics America  HAT2169H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 50A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 30W Tc
Turn Off Delay Time 55 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e4
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 20
Свойство продукта Значение свойства
Pin Count 5
JESD-30 Code R-PSSO-G4
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6650pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Rise Time 64ns
Vgs (Max) ±20V
Fall Time (Typ) 9.5 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 200A
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HAT2169H-EL-E Документы

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