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HAT2174H-EL-E Технические параметры

Renesas Electronics America  HAT2174H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 20A Ta
Drive Voltage (Max Rds On, Min Rds On) 8V 10V
Number of Elements 1 Element
Power Dissipation (Max) 20W Tc
Turn Off Delay Time 31 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Voltage - Rated DC 100V
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 5
JESD-30 Code R-PSSO-G4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2280pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 33.5nC @ 10V
Rise Time 13ns
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 80A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HAT2174H-EL-E Документы

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