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HAT2197R-EL-E Технические параметры

Renesas Electronics America  HAT2197R-EL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 16A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 45 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Voltage - Rated DC 30V
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 16A
Pin Count 8
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.7m Ω @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 25ns
Vgs (Max) ±20V
Fall Time (Typ) 4.2 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0099Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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HAT2197R-EL-E Документы

HAT2197R-EL-E brand manufacturers: Renesas Electronics America, Anli stock, HAT2197R-EL-E reference price.Renesas Electronics America. HAT2197R-EL-E parameters, HAT2197R-EL-E Datasheet PDF and pin diagram description download.You can use the HAT2197R-EL-E Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find HAT2197R-EL-E pin diagram and circuit diagram and usage method of function,HAT2197R-EL-E electronics tutorials.You can download from the Anli.