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HAT2199R-EL-E Технические параметры
Renesas Electronics America HAT2199R-EL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 1 Week | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Surface Mount | YES | |
| Supplier Device Package | 8-SOP | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Continuous Drain Current Id | 11 | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 11A (Ta) | |
| Mfr | Renesas Electronics America Inc | |
| Power Dissipation (Max) | 2W (Ta) | |
| Product Status | Obsolete | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | PRSP0008DD-D8 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | HAT2199R-EL-E | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Renesas Electronics Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.79 | |
| Part Package Code | SOP | |
| Drain Current-Max (ID) | 11 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | 150°C (TJ) | |
| Series | - | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Subcategory | FET General Purpose Power | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 5.5A, 10V | |
| Vgs(th) (Max) @ Id | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 2 W | |
| FET Feature | - |
Индекс :
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