Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
NE3511S02-T1C-A Технические параметры
Renesas Electronics America NE3511S02-T1C-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Surface Mount | YES | |
| Package / Case | 4-SMD, Flat Leads | |
| Supplier Device Package | S02 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | NE3511S02-T1C-A | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Package Description | MICROWAVE, R-PQMW-F4 | |
| Risk Rank | 5.16 | |
| Drain Current-Max (ID) | 0.02 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROWAVE | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Package | Bulk | |
| Mfr | Renesas Electronics America Inc | |
| Product Status | Obsolete | |
| Voltage Rated | 4 V | |
| Series | - | |
| JESD-609 Code | e6 | |
| Pbfree Code | Yes |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | TIN BISMUTH | |
| Current Rating (Amps) | 70mA | |
| Terminal Position | QUAD | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Frequency | 12GHz | |
| Pin Count | 4 | |
| JESD-30 Code | R-PQMW-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Current - Test | 10 mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | HFET | |
| Gain | 13.5dB | |
| DS Breakdown Voltage-Min | 3 V | |
| Power - Output | - | |
| FET Technology | HETERO-JUNCTION | |
| Power Dissipation-Max (Abs) | 0.165 W | |
| Noise Figure | 0.3dB | |
| Voltage - Test | 2 V | |
| Highest Frequency Band | KU BAND | |
| Power Gain-Min (Gp) | 12.5 dB |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ