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NP110N055PUG-E1-AY Технические параметры

Renesas Electronics America  NP110N055PUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 110A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.8W Ta 288W Tc
Turn Off Delay Time 131 ns
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.29.00.95
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 63 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 25700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Rise Time 201ns
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0028Ohm
Pulsed Drain Current-Max (IDM) 440A
DS Breakdown Voltage-Min 55V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NP110N055PUG-E1-AY Документы

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