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- NP180N04TUJ-E2-AY
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NP180N04TUJ-E2-AY Технические параметры
Renesas Electronics America NP180N04TUJ-E2-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | Vendor Undefined | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 7 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSSO-G6 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263 | |
| Drain Current-Max (Abs) (ID) | 180A | |
| Drain-source On Resistance-Max | 0.0015Ohm | |
| Pulsed Drain Current-Max (IDM) | 720A | |
| DS Breakdown Voltage-Min | 40V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| RoHS Status | ROHS3 Compliant |
NP180N04TUJ-E2-AY Документы
- DatasheetsNP180N04TUJ
- PCN Obsolescence/ EOLMult Devices EOL 15/Jun/2018
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