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NP180N055TUJ-E2-AY Технические параметры

Renesas Electronics America  NP180N055TUJ-E2-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Max.) 175°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) Vendor Undefined
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 7
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 180A
Drain-source On Resistance-Max 0.0023Ohm
Pulsed Drain Current-Max (IDM) 720A
DS Breakdown Voltage-Min 55V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 348W
RoHS Status ROHS3 Compliant

NP180N055TUJ-E2-AY Документы

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