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Renesas Electronics America NP52N055SUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 52A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 1.2W Ta 56W Tc | |
| Turn Off Delay Time | 47 ns | |
| Operating Temperature | 175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 3 | |
| Configuration | Single | |
| Turn On Delay Time | 17 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 14m Ω @ 26A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V | |
| Rise Time | 14ns | |
| Drain to Source Voltage (Vdss) | 55V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 7 ns | |
| Continuous Drain Current (ID) | 52A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |